GATE 2020 Electronics paper will have a total of 65 questions of 100 marks.
Hence referring to the GATE Electronics Syllabus, students can effectively plan their preparation strategy and score better marks with top rank. Check GATE Exam Pattern
Below given is a detailed syllabus of the GATE 2020 Electronics paper with all the main sections and core subjects.
Grammar, Vocabulary, Coding-Decoding & Series, Directions, Blood Relations, Arrangements, Syllogism, Inference & Assumptions, Clocks and Puzzles.
Fundamentals, Equations, Percentage, Averages, Ratio & Propotions, Mixture and Alligations, Data Interpretation & Data Suffiency, Time, Speed & Distance, Time & Work, Set Theory & Venn Diagrams, Progression, Functions & Graphs, Logarthims, Permutations and Combinations, Probability, Geometry & Mensuration.
Vector space, basis, linear dependence and independence, matrix algebra, eigen values and eigen vectors, rank, solution of linear equations – existence and uniqueness.
Mean value theorems, theorems of integral calculus, evaluation of definite and improper integrals, partial derivatives, maxima and minima, multiple integrals, line, surface and volume integrals, Taylor series.
First order equations (linear and nonlinear), higher order linear differential equations, Cauchy’s and Euler’s equations, methods of solution using variation of parameters, complementary function and particular integral, partial differential equations, variable separable method, initial and boundary value problems.
Vectors in plane and space, vector operations, gradient, divergence and curl, Gauss’s, Green’s and Stoke’s theorems.
Analytic functions, Cauchy’s integral theorem, Cauchy’s integral formula; Taylor’s and Laurent’s series, residue theorem.
Solution of nonlinear equations, single and multi-step methods for differential equations, convergence criteria.
Probability and Statistics:
Mean, median, mode and standard deviation; combinatorial probability, probability distribution functions – binomial, Poisson, exponential and normal; Joint and conditional probability; Correlation and regression analysis.
Networks, Signals and Systems:
Network solution methods: nodal and mesh analysis; Network theorems: superposition, Thevenin and Norton’s, maximum power transfer; Wye?Delta transformation; Steady state sinusoidal analysis using phasors; Time domain analysis of simple linear circuits; Solution of network equations using Laplace transform; Frequency domain analysis of RLC circuits; Linear 2?port network parameters: driving point and transfer functions; State equations for networks.
Continuous-time signals: Fourier series and Fourier transform representations, sampling theorem and applications; Discrete-time signals: discrete-time Fourier transform (DTFT), DFT, FFT, Z-transform, interpolation of discrete-time signals; LTI systems: definition and properties, causality, stability, impulse response, convolution, poles and zeros, parallel and cascade structure, frequency response, group delay, phase delay, digital filter design techniques.
Energy bands in intrinsic and extrinsic silicon; Carrier transport: diffusion current, drift
current, mobility and resistivity; Generation and recombination of carriers; Poisson and continuity equations; P-N junction, Zener diode, BJT, MOS capacitor, MOSFET, LED, photo diode and solar cell; Integrated circuit fabrication process: oxidation, diffusion, ion implantation, photolithography and twin-tub CMOS process.
Small signal equivalent circuits of diodes, BJTs and MOSFETs; Simple diode circuits: clipping, clamping and rectifiers; Single-stage BJT and MOSFET amplifiers: biasing, bias stability, mid-frequency small signal analysis and frequency response; BJT and MOSFET amplifiers: multi-stage, differential, feedback, power and operational; Simple op-amp circuits; Active filters; Sinusoidal oscillators: criterion for oscillation, single-transistor and opamp configurations; Function generators, wave-shaping circuits and 555 timers; Voltage reference circuits; Power supplies: ripple removal and regulation.
Number systems; Combinatorial circuits: Boolean algebra, minimization of functions using Boolean identities and Karnaugh map, logic gates and their static CMOS implementations, arithmetic circuits, code converters, multiplexers, decoders and PLAs; Sequential circuits: latches and flip?flops, counters, shift?registers and finite state machines; Data converters: sample and hold circuits, ADCs and DACs; Semiconductor memories: ROM, SRAM, DRAM; 8-bit microprocessor (8085): architecture, programming, memory and I/O interfacing.
Basic control system components; Feedback principle; Transfer function; Block diagram representation; Signal flow graph; Transient and steady-state analysis of LTI systems; Frequency response; Routh-Hurwitz and Nyquist stability criteria; Bode and root-locus plots; Lag, lead and lag-lead compensation; State variable model and solution of state equation of LTI systems.
Random processes: autocorrelation and power spectral density, properties of white noise, filtering of random signals through LTI systems; Analog communications: amplitude modulation and demodulation, angle modulation and demodulation, spectra of AM and FM, superheterodyne receivers, circuits for analog communications; Information theory: entropy, mutual information and channel capacity theorem; Digital communications: PCM, DPCM, digital modulation schemes, amplitude, phase and frequency shift keying
(ASK, PSK, FSK), QAM, MAP and ML decoding, matched filter receiver, calculation of bandwidth, SNR and BER for digital modulation; Fundamentals of error correction, Hamming codes; Timing and frequency synchronization, inter-symbol interference and its mitigation; Basics of TDMA, FDMA and CDMA.
Electrostatics; Maxwell’s equations: differential and integral forms and their interpretation,
boundary conditions, wave equation, Poynting vector; Plane waves and properties: reflection and refraction, polarization, phase and group velocity, propagation through various media, skin depth; Transmission lines: equations, characteristic impedance, impedance matching, impedance transformation, S-parameters, Smith chart;
Waveguides: modes, boundary conditions, cut-off frequencies, dispersion relations; Antennas: antenna types, radiation pattern, gain and directivity, return loss, antenna arrays; Basics of radar; Light propagation in optical fibers.
Along with GATE Electronics Syllabus, it’s very much important for GATE candidates to refer the subject wise weightage for ECE paper. GATE Subject Wise Weightage analysis would help students understand which subject to consider the most for scoring more marks.
The Subject wise weightage for GATE ECE 2020 is given below:
We hope this GATE Electronics Weightage analysis will be useful to prepareGATE ECE 2020 exam. You can analyze the frequently asked topics in GATE from the given Subject Wise Marks Distribution GATE analysis to crack GATE 2020 Exam.
|SUBJECTS||GATE 2012||GATE 2013||GATE 2014||GATE 2015||GATE 2016||GATE 2017||GATE 2018||GATE 2019|
|Electronics Devices & Circuits||11%||3%||9%||10%||9.5%||11%||12%||13%|
|Signals & Systems*||8%||11%||11%||9%||9%||9.5%||7%||8%|
The GATE Cut Off is the minimum marks which GATE aspirants need to score to qualify GATE 2020/2021 exam. Candidates who score marks more than or equal to the GATE qualifying cutoff marks would become eligible to take admissions in M.Tech courses.
Most importantly, the GATE scorecard will be issued only to those candidates who score equal to or more than the qualifying GATE 2020 cutoff.
Candidates will be able to check the minimum scores required through the cut off of GATE 2020 below: